Zenode.ai Logo

Description

General part information

RFH10N50

N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationRFH10N50
Current - Continuous Drain (Id) (Tc)10 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max)3000 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-218-3 Isolated Tab, TO-218AC
Package NameTO-218 Isolated
Power Dissipation (Max)150 W
Rds On (Max)600 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

No documents available