Specification	SI1012R-T1-GE3

Current - Continuous Drain (Id) (Ta)	500 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	0.75 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-416, SC-75
Package Name	SC-75A
Power Dissipation (Max)	150 mW
Rds On (Max)	700 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	6 V
Vgs(th) (Max)	900 mV

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