SI2311DS-T1-GE3
ObsoleteVishay Dale
MOSFET P-CH 8V 3A SOT23-3
SI2311DS-T1-GE3
ObsoleteVishay Dale
MOSFET P-CH 8V 3A SOT23-3
Description
General part information
SI2311DS-T1-GE3
MOSFET P-CH 8V 3A SOT23-3
Technical Specifications
Parameters and characteristics for this part
| Specification | SI2311DS-T1-GE3 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 3 A |
| Drain to Source Voltage (Vdss) | 8 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 12 nC |
| Input Capacitance (Ciss) (Max) | 970 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 (TO-236) |
| Power Dissipation (Max) | 710 mW |
| Rds On (Max) | 45 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 800 mV |
Pricing
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