TPC6006-H(TE85L,F)
ObsoleteToshiba Semiconductor and Storage
MOSFET N-CH 40V 3.9A VS-6
TPC6006-H(TE85L,F)
ObsoleteToshiba Semiconductor and Storage
MOSFET N-CH 40V 3.9A VS-6
Description
General part information
TPC6006-H(TE85L,F)
MOSFET N-CH 40V 3.9A VS-6
Technical Specifications
Parameters and characteristics for this part
| Specification | TPC6006-H(TE85L,F) |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 3.9 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 4.4 nC |
| Input Capacitance (Ciss) (Max) | 251 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Package Length | 2.9 mm |
| Package Name | VS-6 |
| Package Width | 2.8 mm |
| Power Dissipation (Max) | 700 mW |
| Rds On (Max) | 75 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.3 V |
Pricing
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