2N6027 TRA PBFREE
ActiveCentral Semiconductor Corp
40V 150MA TH PROGRAMMABLE UJT
2N6027 TRA PBFREE
ActiveCentral Semiconductor Corp
40V 150MA TH PROGRAMMABLE UJT
Description
General part information
2N6027 TRA PBFREE
40V 150MA TH PROGRAMMABLE UJT
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N6027 TRA PBFREE |
|---|---|
| Current - Gate to Anode Leakage (Igao) | 10 nA |
| Current - Peak | 2 µA |
| Current - Valley (Iv) | 50 µA |
| Package / Case | TO-92-3 (TO-226AA) Formed Leads, TO-226-3 |
| Power Dissipation (Max) | 300 mW |
| Voltage | 40 V |
| Voltage - Offset (Vt) | 1.6 V |
| Voltage - Output | 6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available