SI8429DB-T1-E1
ObsoleteVishay Dale
MOSFET P-CH 8V 11.7A 4MICROFOOT
SI8429DB-T1-E1
ObsoleteVishay Dale
MOSFET P-CH 8V 11.7A 4MICROFOOT
Description
General part information
SI8429DB-T1-E1
MOSFET P-CH 8V 11.7A 4MICROFOOT
Technical Specifications
Parameters and characteristics for this part
| Specification | SI8429DB-T1-E1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 11.7 A, 11.7 A |
| Drain to Source Voltage (Vdss) | 8 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 26 nC |
| Input Capacitance (Ciss) (Max) | 1640 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | CSPBGA, 4-XFBGA |
| Package Name | 4-Microfoot |
| Power Dissipation (Max) | 6.25 W, 2.77 W |
| Rds On (Max) | 35 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 5 V |
| Vgs(th) (Max) | 800 mV |
Pricing
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CAD
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Documents
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