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GT035N12M

GT035N12M

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Goford Semiconductor

MOSFET,N-CH,120V,180A,230W,TO-26

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GT035N12M

GT035N12M

Active
Goford Semiconductor

MOSFET,N-CH,120V,180A,230W,TO-26

Find alt

Description

General part information

GT035N12M

MOSFET,N-CH,120V,180A,230W,TO-26

Technical Specifications

Parameters and characteristics for this part

SpecificationGT035N12M
Current - Continuous Drain (Id) (Tc)180 A
Drain to Source Voltage (Vdss)120 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)126 nC, 24 nC
Input Capacitance (Ciss) (Max)1120 pF, 8335 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerSFN, D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263, D2PAK, TOLL-8L
Power Dissipation (Max)230 W, 230 W
Rds On (Max)3.8 mOhm, 11 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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