Description
General part information
BSC042NE7NS3GATMA1
The BSC042NE7NS3 G is a N-channel Power MOSFET with OptiMOS™ technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest ON-state resistances and superior switching performance.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSC042NE7NS3GATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 19 A |
| Current - Continuous Drain (Id) (Tc) | 100 A |
| Drain to Source Voltage (Vdss) | 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 69 nC |
| Input Capacitance (Ciss) (Max) | 4800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-1 |
| Power Dissipation (Max) | 125 W, 2.5 W |
| Rds On (Max) | 4.2 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.8 V |
Pricing
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CAD
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