Description
General part information
IPTG063N15NM5ATMA1
The OptiMOS™ power MOSFET IPTG063N15NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless,TOLGallows excellent electrical performance compared to D2PAK 7-pin with ~60 percent board space reduction. This new package in OptiMOS™ 5 150 V offers very low RDS(on)and is optimized to handle high current. Thanks to the flexibility of gullwing leads, OptiMOS™ in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board (TCoB) compared to the standard requirements (IPC-9701). Among the key benefits, TOLG ensures high efficiency, lower EMI as well as high power density.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPTG063N15NM5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 16.2 A |
| Current - Continuous Drain (Id) (Tc) | 122 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On) | 8 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 63 nC |
| Input Capacitance (Ciss) (Max) | 4800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | Gull Wing, 8-PowerSMD |
| Package Name | PG-HSOG-8 |
| Power Dissipation (Max) | 3.8 W, 214 W |
| Rds On (Max) | 6.3 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.6 V |
Pricing
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