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1N3327B - SBR60100

1N3327B

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Microchip Technology

ZENER DIODE SINGLE 2-PIN 39V, 5%, 4OHM, 50000MW DO-5 TRAY

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1N3327B - SBR60100

1N3327B

Active
Microchip Technology

ZENER DIODE SINGLE 2-PIN 39V, 5%, 4OHM, 50000MW DO-5 TRAY

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification1N3327B1N3327B-Zener-Diode Series
--
Current - Reverse Leakage @ Vr10 µA10 µA
Impedance (Max) (Zzt) [Max]4 Ohms4 Ohms
Mounting TypeChassis, Stud MountChassis, Stud Mount
Operating Temperature [Max]347 °F347 °F
Operating Temperature [Min]-65 ░C-65 ░C
Package / CaseDO-203AB, DO-5, StudDO-203AB, DO-5, Stud
Power - Max [Max]50 W50 W
Supplier Device PackageDO-5DO-5
Tolerance5 %5 %
Voltage - Forward (Vf) (Max) @ If1.5 V1.5 V
Voltage - Zener (Nom) (Vz)39 V39 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 42.79
Microchip DirectN/A 1$ 46.09
NewarkEach 100$ 42.80
500$ 41.15

1N3327B-Zener-Diode Series

Zener Diode Single 2-Pin 39V, 5%, 4Ohm, 50000mW DO-5 Tray

PartVoltage - Zener (Nom) (Vz)TolerancePower - Max [Max]Mounting TypeCurrent - Reverse Leakage @ VrPackage / CaseOperating Temperature [Min]Operating Temperature [Max]Voltage - Forward (Vf) (Max) @ IfSupplier Device PackageImpedance (Max) (Zzt) [Max]
Microchip Technology
1N3327B
Microchip Technology
1N3327B
39 V
5 %
50 W
Chassis, Stud Mount
10 µA
DO-203AB, DO-5, Stud
-65 ░C
347 °F
1.5 V
DO-5
4 Ohms

Description

General part information

1N3327B-Zener-Diode Series

These high power 50 W Zener diodes represented by the JEDEC registered 1N3305 thru 1N3350B and 1N4549 thru 1N4556B series provide voltage regulation in a selection over a 3.9 V to 200 V broad range of voltages. They may be operated up to 50 W with adequate mounting and heat sinking with their low thermal resistance. These Zeners are also available in JAN, JANTX, JANTXV military qualifications. Microchip also offers numerous other Zener products to meet higher and lower power applications