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SI4202DY-T1-GE3

SI4202DY-T1-GE3

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Vishay Dale

MOSFET 2N-CH 30V 12.1A 8SOIC

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SI4202DY-T1-GE3

SI4202DY-T1-GE3

Active
Vishay Dale

MOSFET 2N-CH 30V 12.1A 8SOIC

Find alt

Description

General part information

SI4202DY-T1-GE3

MOSFET 2N-CH 30V 12.1A 8SOIC

Technical Specifications

Parameters and characteristics for this part

SpecificationSI4202DY-T1-GE3
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id)12.1 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Max)17 nC
Input Capacitance (Ciss) (Max)710 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package Length0.154 in
Package Name8-SOIC
Package Width3.9 mm
Power - Max3.7 W
Rds On (Max)14 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)2.5 V

Pricing

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CAD

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Documents

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