NSVMMBD1504ALT1G
ActiveON Semiconductor
HIGH CONDUCTANCE LOW LEAKAGE DIO
NSVMMBD1504ALT1G
ActiveON Semiconductor
HIGH CONDUCTANCE LOW LEAKAGE DIO
Description
General part information
NSVMMBD1504ALT1G
HIGH CONDUCTANCE LOW LEAKAGE DIO
Technical Specifications
Parameters and characteristics for this part
| Specification | NSVMMBD1504ALT1G |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 200 mA |
| Current - Reverse Leakage | 10 nA |
| Diode Configuration | Common Cathode |
| Diode Pair Count | 1 pair |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 (TO-236) |
| Qualification | AEC-Q101 |
| Speed | Any Speed, Small Signal |
| Speed - Fast Recovery (Maximum) | 200 mA |
| Speed - Small Signal Current Max | 200 mA, 200 mA, 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) | 1.1 V |
Pricing
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CAD
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Documents
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