CQY80N

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Vishay General Semiconductor - Diodes Division

OPTOISO 5KV TRANS W/BASE 6DIP

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Vishay General Semiconductor - Diodes Division

OPTOISO 5KV TRANS W/BASE 6DIP

Technical Specifications

Parameters and characteristics for this part

Specification	CQY80N

Current - DC Forward (If) (Max) [Max]	60 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Min) [Min]	50 %
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-DIP
Package / Case	0.3 in
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	6.7 µs
Rise / Fall Time (Typ) [custom]	7 µs
Supplier Device Package	6-DIP
Turn On / Turn Off Time (Typ)	7 µs, 11 µs
Vce Saturation (Max) [Max]	300 mV
Voltage - Forward (Vf) (Typ)	1.25 V
Voltage - Output (Max) [Max]	32 V

Part	Input Type	Number of Channels	Vce Saturation (Max) [Max]	Package / Case	Package / Case	Package / Case	Current Transfer Ratio (Min) [Min]	Current - DC Forward (If) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Turn On / Turn Off Time (Typ)	Supplier Device Package	Voltage - Forward (Vf) (Typ)	Current - Output / Channel	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Output (Max) [Max]	Mounting Type	Package / Case
Vishay General Semiconductor - Diodes Division CQY80N	DC	1	300 mV	6-DIP	0.3 in	7.62 mm	50 %	60 mA	100 °C	-55 °C	7 µs 11 µs	6-DIP	1.25 V	50 mA	6.7 µs	7 µs	32 V	Through Hole
Vishay General Semiconductor - Diodes Division CQY80NG	DC	1	300 mV	6-DIP		10.16 mm	50 %	60 mA	100 °C	-55 °C	7 µs 11 µs	6-DIP	1.25 V	50 mA	6.7 µs	7 µs	32 V	Through Hole	10.16 mm

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General part information

Optoisolator Transistor with Base Output 5000Vrms 1 Channel 6-DIP

Technical documentation and resources