HIP6601BCBZ-T
ActiveON Semiconductor
HALF BRIDGE BASED MOSFET DRIVER,
HIP6601BCBZ-T
ActiveON Semiconductor
HALF BRIDGE BASED MOSFET DRIVER,
Description
General part information
HIP6601BCBZ-T
Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
Technical Specifications
Parameters and characteristics for this part
| Specification | HIP6601BCBZ-T |
|---|---|
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Fall Time (Typ) | 20 ns |
| Gate Channel | N-Channel |
| Gate Type | N-Channel MOSFET, MOSFET |
| High Side Voltage - Max (Bootstrap) | 15 V |
| Input Type | Non-Inverting |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | 0 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Rise Time (Typ) | 20 ns |
| Voltage - Supply (Maximum) | 13.2 V |
| Voltage - Supply (Minimum) | 10.8 VDC |
Pricing
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