Description
General part information
IPB043N10NF2SATMA1
Infineon'sStrongIRFET™ 2power MOSFET 100 V features low RDS(on)of 4.3 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB043N10NF2SATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 21 A |
| Current - Continuous Drain (Id) (Tc) | 135 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 85 nC |
| Input Capacitance (Ciss) (Max) | 4000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | PG-TO263-3 |
| Power Dissipation (Max) | 167 W, 3.8 W |
| Rds On (Max) | 4.35 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.8 V |
Pricing
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