Description
General part information
BSS123IXTSA1
The OptiMOS™ N-channel enhancement mode MOSFET BSS123I 100 V in SOT-23-3 package features low RDS(on)of 6 Ohm (at VGS10 V). With an optimal price/performance ratio and small footprint packages Infineon'ssmall signal and small power MOSFETsare the best fit for a wide range of applications and circuits. These includelow voltage drives,linear battery charger,battery protection, load switches,DC-DC converters, reverse polarity protection and many more. Small signal/small power N- and P-channel MOSFETsprovide a wide range of VGS(th)levels and RDS(on)values, as well as multiple voltage classes. Enhancement and depletion-mode options, as well as Industry qualification make Infineon’s portfolio the best fit for industry and consumer markets.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSS123IXTSA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 190 mA |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 0.63 nC |
| Input Capacitance (Ciss) (Max) | 15 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | PG-SOT-23-3 |
| Power Dissipation (Max) | 500 mW |
| Rds On (Max) | 6 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 1.8 V |
Pricing
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