GC15MPS12-220
ObsoleteGeneSiC Semiconductor
DIODE SIL CARB 1200V 82A TO220
GC15MPS12-220
ObsoleteGeneSiC Semiconductor
DIODE SIL CARB 1200V 82A TO220
Description
General part information
GC15MPS12-220
DIODE SIL CARB 1200V 82A TO220
Technical Specifications
Parameters and characteristics for this part
| Specification | GC15MPS12-220 |
|---|---|
| Capacitance | 1089 pF |
| Current - Average Rectified (Io) | 82 A |
| Current - Reverse Leakage | 14 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-220-2 |
| Package Name | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 1.8 V |
Pricing
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CAD
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Documents
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