IRFPS37N50APBF

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Infineon Technologies

MOSFET N-CH 500V 36A SUPER247

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Infineon Technologies

MOSFET N-CH 500V 36A SUPER247

Technical Specifications

Parameters and characteristics for this part

Specification	IRFPS37N50APBF

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds	5579 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-274AA
Power Dissipation (Max)	446 W
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	SUPER-247™ (TO-274AA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Package / Case	Technology	Rds On (Max) @ Id, Vgs
Infineon Technologies IRFPS37N50APBF	10 V	5579 pF	Through Hole	446 W	180 nC	500 V	36 A	30 V	SUPER-247™ (TO-274AA)	-55 °C	150 °C	4 V	N-Channel	TO-274AA	MOSFET (Metal Oxide)	130 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 36A (Tc) 446W (Tc) Through Hole SUPER-247™ (TO-274AA)

Technical documentation and resources

No documents available