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IRFP4768PBF - TO-247-3 AC EP

IRFP4768PBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 250 V, 93 A, 0.0145 OHM, TO-247AC, THROUGH HOLE

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IRFP4768PBF - TO-247-3 AC EP

IRFP4768PBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 250 V, 93 A, 0.0145 OHM, TO-247AC, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFP4768PBF
Current - Continuous Drain (Id) @ 25°C93 A
Drain to Source Voltage (Vdss)250 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs270 nC
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]520 W
Rds On (Max) @ Id, Vgs17.5 mOhm
Supplier Device PackageTO-247AC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 8.78
10$ 6.01
100$ 4.44
500$ 4.00
NewarkEach 1$ 6.03
10$ 5.16
25$ 4.27
50$ 4.20
100$ 4.13

Description

General part information

IRFP4768 Series

The IRFP4768PBF is a 250V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.

Documents

Technical documentation and resources