2SD1695-AZ

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Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR NPN

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Documents2SD1695 Data Sheet

2SD1695-AZ

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Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR NPN

Deep-Dive with AI

Documents2SD1695 Data Sheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1695-AZ

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max	1.3 W
Supplier Device Package	TO-126
Vce Saturation (Max) @ Ib, Ic	1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	35 V

2SD1695 Series

Bipolar Power Transistors

Part	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Mounting Type	Package / Case
Renesas Electronics Corporation 2SD1695-AZ	TO-126	10 µA	150 °C	35 V	1.3 W	1.2 V	2 A	2000 hFE	Through Hole	TO-126-3, TO-225AA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	111	$ 2.70

Description

General part information

2SD1695 Series

A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.

Documents

Technical documentation and resources

2SD1695 Data Sheet

Datasheet