RSFDL

Taiwan Semiconductor Corporation

DIODE GP 200V 500MA SUB SMA

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Taiwan Semiconductor Corporation

DIODE GP 200V 500MA SUB SMA

Technical Specifications

Parameters and characteristics for this part

Specification	RSFDL

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	500 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-219AB
Reverse Recovery Time (trr)	150 ns
Speed	200 mA, 500 ns
Supplier Device Package	Sub SMA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Technology	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Capacitance @ Vr, F	Supplier Device Package	Current - Reverse Leakage @ Vr
Taiwan Semiconductor Corporation RSFDL	Surface Mount	150 °C	-55 °C	200 mA 500 ns	1.3 V	200 V	DO-219AB	Standard	150 ns	500 mA	4 pF	Sub SMA	5 µA
Taiwan Semiconductor Corporation RSFDL R3G	Surface Mount	150 °C	-55 °C	200 mA 500 ns	1.3 V	200 V	DO-219AB	Standard	150 ns	500 mA	4 pF	Sub SMA	5 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 500mA Surface Mount Sub SMA

Technical documentation and resources