IRFP7718PBF

Obsolete

Infineon Technologies

MOSFET N-CH 75V 195A TO247AC

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Obsolete

Infineon Technologies

MOSFET N-CH 75V 195A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	IRFP7718PBF

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	830 nC
Input Capacitance (Ciss) (Max) @ Vds	29550 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	517 W
Rds On (Max) @ Id, Vgs	1.8 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.7 V

Part	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	FET Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type
Infineon Technologies IRFP7718PBF	517 W	3.7 V	1.8 mOhm	75 V	20 V	29550 pF	6 V 10 V	MOSFET (Metal Oxide)	195 A	830 nC	TO-247AC	N-Channel	TO-247-3	-55 °C	175 ░C	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$