STS8N6LF6AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 60 V, 21 MOHM TYP., 8 A STRIPFET F6 POWER MOSFET IN A SO-8 PACKAGE

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DocumentsDatasheet Product Change Notice EN +14

STS8N6LF6AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 60 V, 21 MOHM TYP., 8 A STRIPFET F6 POWER MOSFET IN A SO-8 PACKAGE

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DocumentsDatasheet Product Change Notice EN +14

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STS8N6LF6AG

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	3.2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

STS8N6LF6AG Series

Automotive-grade N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Grade	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Qualification	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
STMicroelectronics STS8N6LF6AG	24 mOhm	4.5 V, 10 V	3.2 W	Automotive	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	8 A	AEC-Q101	8-SOIC	1340 pF	-55 °C	175 ░C	20 V	N-Channel	2.5 V	60 V	27 nC	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.92
		10	$ 0.75
		100	$ 0.58
		500	$ 0.49
		1000	$ 0.40
	Digi-Reel®	1	$ 0.92
		10	$ 0.75
		100	$ 0.58
		500	$ 0.49
		1000	$ 0.40
	Tape & Reel (TR)	2500	$ 0.38
		5000	$ 0.36
		12500	$ 0.34
		25000	$ 0.34
Newark	Each (Supplied on Cut Tape)	1	$ 1.13
		10	$ 1.05
		25	$ 0.96
		50	$ 0.87
		100	$ 0.77
		250	$ 0.71
		500	$ 0.65
		1000	$ 0.61

Description

General part information

STS8N6LF6AG Series

This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.

Documents

Technical documentation and resources

Datasheet

STS8N6LF6AG

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STS8N6LF6AG

Deep-Dive with AI

Technical Specifications

STS8N6LF6AG Series

Pricing

Description

STS8N6LF6AG Series

Documents

Datasheet

Product Change Notice EN

UM1575

AN4337

AN4390

TN1224

AN3267

TN1225

AN4191

DS11956

Technical Specifications

STS8N6LF6AG Series