SF2005G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 20A TO220AB

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Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 20A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SF2005G

Capacitance @ Vr, F	80 pF
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Speed	Technology	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Grade	Diode Configuration	Qualification	Current - Average Rectified (Io) (per Diode)
Taiwan Semiconductor Corporation SF2005G	TO-220-3	300 V	35 ns	80 pF	Through Hole	TO-220AB	1.3 V	200 mA 500 ns	Standard	5 µA	150 °C	-55 °C
Taiwan Semiconductor Corporation SF2005GH	TO-220-3	300 V	35 ns		Through Hole	TO-220AB	1.3 V	200 mA 500 ns	Standard	5 µA	150 °C	-55 °C	Automotive	1 Pair Common Cathode	AEC-Q101	20 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 300 V 20A Through Hole TO-220AB

Technical documentation and resources