DMN1054UCB4-7

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Diodes Inc

MOSFET, N-CH, 8V, 2.7A, X1-WLB0808 ROHS COMPLIANT: YES

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Active

Diodes Inc

MOSFET, N-CH, 8V, 2.7A, X1-WLB0808 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	DMN1054UCB4-7

Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds	908 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	WLBGA, 4-XFBGA
Power Dissipation (Max)	740 mW
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	X1-WLB0808-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max) @ Id	700 mV

N-Channel Enhancement Mode MOSFET

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology
Diodes Inc DMN1054UCB4-7	X1-WLB0808-4	2.7 A	8 V	908 pF	5 V	Surface Mount	4-XFBGA WLBGA	1.2 V 4.5 V	700 mV	42 mOhm	740 mW	15 nC	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)

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General part information

N-Channel Enhancement Mode MOSFET

Technical documentation and resources