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Description

General part information

RQM2201DNS#P0

MOSFET 2N-CH 60V 2A 6HWSON

Technical Specifications

Parameters and characteristics for this part

SpecificationRQM2201DNS#P0
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id) (Ta)2 A
Drain to Source Voltage (Vdss)60 V
Gate Charge (Max)2.4 nC
Input Capacitance (Ciss) (Max)200 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case6-WDFN Exposed Pad
Package Length3 mm
Package Name6-HWSON
Package Width3 mm
Power - Max (Ta)1.5 W
Rds On (Max)225 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)1.4 V

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