Description
General part information
IST019N08NM5AUMA1
The IST019N08NM5 OptiMOS™ 5 power MOSFET 80 V in sTOLL package features low RDS(on)of 1.9 mOhm and290 A high current capability. It has the advantages of Infineon’s well-known quality level for robust industry packages making it the ideal solution for various performance inbattery management systems,light electric vehicles, andindustrial robots. The improved RDS(on)and IDratings, continuous and pulsed, enable increased battery run time and higher power density.
Technical Specifications
Parameters and characteristics for this part
| Specification | IST019N08NM5AUMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 32 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 132 nC |
| Input Capacitance (Ciss) (Max) | 6600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 5-PowerSFN |
| Package Name | PG-HSOF-5-4 |
| Power Dissipation (Max) | 3.8 W, 313 W |
| Rds On (Max) | 1.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.8 V |
Pricing
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CAD
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