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IPDQ60R025CFD7XTMA1

IPDQ60R025CFD7XTMA1

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INFINEON

INFINEON’S ANSWER TO RESONANT HIGH POWER TOPOLOGIES

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IPDQ60R025CFD7XTMA1

IPDQ60R025CFD7XTMA1

Active
INFINEON

INFINEON’S ANSWER TO RESONANT HIGH POWER TOPOLOGIES

Find alt

Description

General part information

IPDQ60R025CFD7XTMA1

The600 V CoolMOS™ CFD7is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market

Technical Specifications

Parameters and characteristics for this part

SpecificationIPDQ60R025CFD7XTMA1
Current - Continuous Drain (Id) (Tc)90 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)141 nC
Input Capacitance (Ciss) (Max)5626 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case22-PowerBSOP Module
Package NamePG-HDSOP-22-1
Power Dissipation (Max)446 W
Rds On (Max)25 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

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Documents

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