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G085P02TS

G085P02TS

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Goford Semiconductor

P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V

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G085P02TS

G085P02TS

Active
Goford Semiconductor

P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V

Find alt

Description

General part information

G085P02TS

P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V

Technical Specifications

Parameters and characteristics for this part

SpecificationG085P02TS
Current - Continuous Drain (Id) (Tc)8.2 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)1.8 V
Drive Voltage (Min Rds On)4.5 V
FET TypeP-Channel
Gate Charge (Max)29 nC
Input Capacitance (Ciss) (Max)1255 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package Length0.173 in
Package Name8-TSSOP
Package Width4.4 mm
Power Dissipation (Max)1.05 W
Rds On (Max)8.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max)900 mV

Pricing

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CAD

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Documents

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