PMDT290UNEH
ActiveNexperia USA Inc.
MOSFET 2N-CH 20V 0.8A SOT666
PMDT290UNEH
ActiveNexperia USA Inc.
MOSFET 2N-CH 20V 0.8A SOT666
Description
General part information
PMDT290UNEH
MOSFET 2N-CH 20V 0.8A SOT666
Technical Specifications
Parameters and characteristics for this part
| Specification | PMDT290UNEH |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Ta) | 800 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Max) | 0.68 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 83 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-563, SOT-666 |
| Package Name | SOT-666 |
| Power - Max (Ta) | 330 mW |
| Power - Max (Tc) | 1.09 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 380 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 950 mV |
Pricing
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CAD
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Documents
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