Description
General part information
IGT60R070D1E8220ATMA1
GAN HV
Technical Specifications
Parameters and characteristics for this part
| Specification | IGT60R070D1E8220ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 31 A |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) | 380 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerSFN |
| Package Name | PG-HSOF-8-3 |
| Power Dissipation (Max) | 125 W |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | -10 V |
| Vgs(th) (Max) | 1.6 V |
Pricing
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CAD
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Documents
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