Specification	NSF040120D7A0J

Current - Continuous Drain (Id) (Tc)	65 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On)	15 V
Drive Voltage (Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Max)	95 nC
Input Capacitance (Ciss) (Max)	2600 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Leads	7 Leads
Package Name	D2PAK, TO-236-7
Power Dissipation (Max)	306 W
Rds On (Max)	60 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	22 V
Vgs(th) (Max)	2.9 V

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