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FQP6N60C_F080

FQP6N60C_F080

Obsolete
ON Semiconductor

MOSFET N-CH 600V 5.5A TO220-3

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FQP6N60C_F080

FQP6N60C_F080

Obsolete
ON Semiconductor

MOSFET N-CH 600V 5.5A TO220-3

Find alt

Description

General part information

FQP6N60C_F080

MOSFET N-CH 600V 5.5A TO220-3

Technical Specifications

Parameters and characteristics for this part

SpecificationFQP6N60C_F080
Current - Continuous Drain (Id) (Tc)5.5 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)20 nC
Input Capacitance (Ciss) (Max)810 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220-3
Power Dissipation (Max)125 W
Rds On (Max)2 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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