Description
General part information
IAUC60N10S5L110ATMA1
The IAUC60N10S5L110 is an 11mR 100V MOSFET in a 5x6 SSO8 package, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in LED lighting and DCDC Converters.
Technical Specifications
Parameters and characteristics for this part
| Specification | IAUC60N10S5L110ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 60 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 24.1 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1665 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-33 |
| Power Dissipation (Max) | 88 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 11 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.2 V |
Pricing
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CAD
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Documents
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