Specification	NTMFD5875NLT1G

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	7 A
Current - Continuous Drain (Id) (Tc)	22 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Max)	5.9 nC
Input Capacitance (Ciss) (Max)	540 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Length (8-DFN)	5 mm
Package Name	Dual Flag, 8-DFN, SO8FL-Dual
Package Width (8-DFN)	6 mm
Power - Max (Ta)	3.2 W
Power - Max (Tc)	32 W
Rds On (Max)	33 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	3 V

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