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S29GL01GS11WEI019

S29GL01GS11WEI019

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INFINEON

IC FLASH 1GBIT PARALLEL WAFER

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S29GL01GS11WEI019

S29GL01GS11WEI019

Active
INFINEON

IC FLASH 1GBIT PARALLEL WAFER

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Description

General part information

S29GL01GS11WEI019

IC FLASH 1GBIT PARALLEL WAFER

Technical Specifications

Parameters and characteristics for this part

SpecificationS29GL01GS11WEI019
Access Time110 ns
Memory Depth64 M
Memory FormatFLASH
Memory Interface (Type)Parallel
Memory Size1 Gbit
Memory TypeNon-Volatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / CaseDie
Package NameWafer
TechnologyFLASH - NOR
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)2.7 V
Write Cycle Time - Page60 ns
Write Cycle Time - Word60 ns

Pricing

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CAD

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Documents

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