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GC060N65QF

GC060N65QF

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Goford Semiconductor

MOSFET,N-CH,650V,50A,388W,TO-247

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GC060N65QF

GC060N65QF

Active
Goford Semiconductor

MOSFET,N-CH,650V,50A,388W,TO-247

Find alt

Description

General part information

GC060N65QF

MOSFET,N-CH,650V,50A,388W,TO-247

Technical Specifications

Parameters and characteristics for this part

SpecificationGC060N65QF
Current - Continuous Drain (Id) (Tc)50 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)128 nC
Input Capacitance (Ciss) (Max)3395 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NameTO-247
Power Dissipation (Max)388 W
Rds On (Max)60 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4.6 V

Pricing

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CAD

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Documents

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