Description
General part information
2ED2110S06MXUMA1
650 V high speed, high currenthigh-side and low-sidegate driver with typical 2.5 A source and sink currents in DSO-16 package for driving powerMOSFETs andIGBTs. Based on ourSOI-technology, the 2ED2110S06M has excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2ED2110S06MXUMA1 |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Sink) | 2.5 A |
| Current - Peak Output (Source) | 2.5 A |
| Driven Configuration | High-Side, Low-Side |
| Fall Time (Typ) | 17 ns |
| Gate Channel | N-Channel |
| Gate Type | IGBT, MOSFET |
| High Side Voltage - Max (Bootstrap) | 650 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIH | 14 V |
| Logic Voltage - VIL | 6 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.295 in |
| Package Name | 16-SOIC |
| Package Width | 7.5 mm |
| Rise Time (Typ) | 25 ns |
| Voltage - Supply (Maximum) | 20 V |
| Voltage - Supply (Minimum) | 10 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources