SI4200DY-T1-GE3
ObsoleteVishay Dale
MOSFET 2N-CH 25V 8A 8SOIC
SI4200DY-T1-GE3
ObsoleteVishay Dale
MOSFET 2N-CH 25V 8A 8SOIC
Description
General part information
SI4200DY-T1-GE3
MOSFET 2N-CH 25V 8A 8SOIC
Technical Specifications
Parameters and characteristics for this part
| Specification | SI4200DY-T1-GE3 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 8 A |
| Drain to Source Voltage (Vdss) | 25 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 12 nC |
| Input Capacitance (Ciss) (Max) | 415 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Power - Max | 2.8 W |
| Rds On (Max) | 25 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.2 V |
Pricing
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CAD
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Documents
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