Description
General part information
IPD040N03LF2SATMA1
Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on)of 4 mOhm in a DPAK package. This product addresses a broad range of applications from low- to high-switching frequency. Compared to the previous technology, the IPD040N03LF2S achieves up to 40% RDS(on)improvement while having up to 60% FOM enhancement and excellent robustness.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPD040N03LF2SATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 20 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 41 nC |
| Input Capacitance (Ciss) (Max) | 1800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | PG-TO252-3-34 |
| Power Dissipation (Max) | 75 W, 3 W |
| Rds On (Max) | 4.05 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.35 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources