Description
General part information
ISP16DP10LMAXTSA1
ISP16DP10LMA features a low RDS(on)of 0.067 Ohm for easy power loss management making it the best-in-class MOSFET in a SOT-223 package targeted for automotive applications. The main advantage of a P-channel device is the reduction of design complexity. In addition, the avalanche ruggedness capability of this MOSFET makes it suitable for high demanding applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISP16DP10LMAXTSA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 2.3 A |
| Current - Continuous Drain (Id) (Tc) | 3.9 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 55 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 2100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Package Name | PG-SOT223-4-21 |
| Power Dissipation (Max) | 5 W, 1.8 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 167 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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CAD
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