Description
General part information
IGW50N60TFKSA1
The IGW50N60T is a Low Loss IGBT in TrenchStop® and field-stop technology. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Technical Specifications
Parameters and characteristics for this part
| Specification | IGW50N60TFKSA1 |
|---|---|
| Current - Collector (Ic) (Max) | 100 A |
| Current - Collector Pulsed (Icm) | 150 A |
| Gate Charge | 310 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-247-3 |
| Package Name | PG-TO247-3-1 |
| Power - Max | 333 W |
| Switching Energy | 2.6 mJ |
| Td (off) @ 25°C | 299 ns |
| Td (on) @ 25°C | 26 ns |
| Test Condition Current | 50 A |
| Test Condition Resistance | 7 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Pricing
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CAD
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Documents
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