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W63AH6NBVACE

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Winbond Electronics

IC DRAM 1GBIT HSUL 12 178VFBGA

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W63AH6NBVACE

Active
Winbond Electronics

IC DRAM 1GBIT HSUL 12 178VFBGA

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Description

General part information

W63AH6NBVACE

IC DRAM 1GBIT HSUL 12 178VFBGA

Technical Specifications

Parameters and characteristics for this part

SpecificationW63AH6NBVACE
Access Time5.5 ns
Clock Frequency933 MHz
Memory Depth64 M
Memory FormatDRAM
Memory Interface (Type)HSUL_12
Memory Size1 Gbit
Memory TypeVolatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-25 °C
Package / Case178-VFBGA
Package Length11 mm
Package Name178-VFBGA
Package Width11.5 mm
TechnologySDRAM - Mobile LPDDR3
Voltage - Supply (Range 1 Maximum)1.3 V
Voltage - Supply (Range 1 Minimum)1.14 V
Voltage - Supply (Range 2 Maximum)1.95 V
Voltage - Supply (Range 2 Minimum)1.7 V
Write Cycle Time - Page15 ns
Write Cycle Time - Word15 ns

Pricing

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CAD

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Documents

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