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ROHM RBR10NS40AFHTL

IGB50N60TATMA1

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THE IGB50N60T IS A 600 V, 50 A IGBT DISCRETE IN TO263 PACKAGE (TO263 D2PAK PACKAGE)

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ROHM RBR10NS40AFHTL

IGB50N60TATMA1

Active
INFINEON

THE IGB50N60T IS A 600 V, 50 A IGBT DISCRETE IN TO263 PACKAGE (TO263 D2PAK PACKAGE)

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Description

General part information

IGB50N60TATMA1

Hard-switching 600 V, 50 A singleTRENCHSTOP™IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Technical Specifications

Parameters and characteristics for this part

SpecificationIGB50N60TATMA1
Current - Collector (Ic) (Max)100 A
Current - Collector Pulsed (Icm)150 A
Gate Charge310 nC
IGBT TypeTrench
Input TypeStandard
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-40 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NamePG-TO263-3-2
Power - Max333 W
Switching Energy2.6 mJ
Td (off) @ 25°C299 ns
Td (on) @ 25°C26 ns
Test Condition Current50 A
Test Condition Resistance7 Ohm
Test Condition Voltage400 V
Test Condition Voltage (Secondary)15 V
Vce(on) (Max)2 V
Voltage - Collector Emitter Breakdown (Max)600 V

Pricing

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CAD

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