Description
General part information
BFP740H6327XTSA1
The BFP740 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).
Technical Specifications
Parameters and characteristics for this part
| Specification | BFP740H6327XTSA1 |
|---|---|
| Current - Collector (Ic) (Max) | 0.03 mA |
| DC Current Gain (hFE) (Min) | 160 |
| Frequency - Transition | 42 GHz |
| Gain | 27 dB |
| Mounting Type | Surface Mount |
| Noise Figure (Typical) Maximum | 0.85 dB |
| Noise Figure (Typical) Minimum | 0.5 dB |
| Operating Temperature | 150 °C |
| Package / Case | SOT-343, SC-82A |
| Package Name | PG-SOT343-4-2 |
| Power - Max | 160 mW |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 4.7 V |
Pricing
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CAD
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Documents
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