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Description

General part information

TSM60NE160CE RVG

600V, 21A, SINGLE N-CHANNEL HIGH

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM60NE160CE RVG
Current - Continuous Drain (Id) (Tc)21 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On)10 V
Drive Voltage (Min Rds On)12 V
FET TypeN-Channel
Gate Charge (Max)42 nC
Input Capacitance (Ciss) (Max)1618 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case5-VDFN Exposed Pad
Package Length8 mm
Package Name5-PDFN
Package Width8 mm
Power Dissipation (Max)173 W
Rds On (Max)155 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)6 V

Pricing

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