Specification	SISHA06DN-T1-GE3

Current - Continuous Drain (Id) (Ta)	28.1 A
Current - Continuous Drain (Id) (Tc)	104 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	67 nC
Input Capacitance (Ciss) (Max)	3932 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8SH
Package Name	PowerPAK® 1212-8SH
Power Dissipation (Max)	52 W, 3.7 W
Rds On (Max)	3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.4 V

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