Specification	SI4963DY

Channel Count	2
Configuration	P-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	6.2 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Max)	20 nC
Input Capacitance (Ciss) (Max)	1456 pF, 1456 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power - Max (Ta)	900 mW
Rds On (Max)	33 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.5 V

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