
RFL1N12
ActiveON Semiconductor
N-CHANNEL POWER MOSFET

RFL1N12
ActiveON Semiconductor
N-CHANNEL POWER MOSFET
Description
General part information
RFL1N12
N-Channel 120 V 1A (Tc) 8.33W (Tc) Through Hole TO-205AF (TO-39)
Technical Specifications
Parameters and characteristics for this part
| Specification | RFL1N12 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 1 A |
| Drain to Source Voltage (Vdss) | 120 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) | 200 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-205AF Metal Can |
| Package Name | TO-205AF (TO-39) |
| Power Dissipation (Max) | 8.33 W |
| Rds On (Max) | 1.9 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available