G20P08K
ActiveGoford Semiconductor
P-80V,RD(MAX)<62M@-10V,RD(MAX)<7
G20P08K
ActiveGoford Semiconductor
P-80V,RD(MAX)<62M@-10V,RD(MAX)<7
Description
General part information
G20P08K
P-80V,RD(MAX)<62M@-10V,RD(MAX)<7
Technical Specifications
Parameters and characteristics for this part
| Specification | G20P08K |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 20 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 48 nC, 48 nC |
| Input Capacitance (Ciss) (Max) | 3500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252 |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) | 62 mOhm, 62 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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